FDMC8010DC datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* DUAL COOL Top Side Cooling PQFN Package
* Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A
* Max rDS(on) = 1.74 mW at VGS = 4.5 V, ID = 32 A
* High Perfor.

Application

* Load Switch
* Motor Bridge Switch
* Synchronous Rectifier MOSFET MAXIMUM RATINGS (TA = 25°C Unless Otherw.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extreme.

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